ON SEMICONDUCTOR BD139G Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1.25 W, 1.5 A, 40 hFE Sensei LCR-PU Minimum working distance of 13"

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ON SEMICONDUCTOR BD139G Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1.25 W, 1.5 A, 40 hFE Sensei LCR-PU Minimum working distance of 13"The BD139G is an NPN Plastic Medium Power Silicon Transistor designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. High DC current gain Halogen free Applications Industrial Product details Power Dissipation Pd 1. 25W DC Collector Current 1. 5A Collector Emitter Voltage V(br)ceo 80V Transition Frequency ft Operating Temperature Max 150C Transistor Polarity NPN DC Current Gain hFE 40hFE No. of Pins